| PART |
Description |
Maker |
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MRF255PHT |
RF Power Field-Effect Transistor
|
Motorola, Inc
|
| MTP10N25 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
| MRF1518T1 MRF1518NT1 |
RF Power Field Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| MTM20P10 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| MRF1511T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MTM25N10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
